| 1. | A theoretical research of hall coefficient in the normal state of bi
正常态霍尔系数的理论分析 |
| 2. | Test method for resistivity and hall coefficient in insb single crystals
锑化铟单晶电阻率及霍耳系数的测试方法 |
| 3. | A theoretical research of hall coefficient in the normal state of bi2sr2cacu2o8
Bi2sr2cacu2o8正常态霍尔系数的理论分析 |
| 4. | Extrinsic semiconductor single crystals - measurement of hall mobility and hall coefficient
非本征半导体单晶霍尔迁移率和霍尔系数测量方法 |
| 5. | Test methods for measuring resistivity and hall coefficient and determining hall mobility in single - crystal semiconductors
测量单晶半导体的电阻率霍尔系数及霍尔迁移率的试验方法 |
| 6. | Hall coefficient depends on electronic concentration and the relative values of empty hole concentrations and their migration rate in the semiconductor
而霍耳系数取决于半导体材料中电子浓度和空穴浓度的相对大小及其迁移率之比。 |
| 7. | In the hall effect , hall electromotive force is not only related to the current density , magnetic field and the distance of the poles , but also to hall coefficient directly
据知,霍耳效应中输出的霍耳电动势除了跟输入的电流强度、磁场强度及输出电极的间距有关外,还与霍耳系数成正比。 |
| 8. | And got the results consistent with the experiments . it is argued that the successive deepening of pseudogap with decreasing temperature leads to that hall coefficient attains to a positive maximum at the temperature a little higher than
正常态霍尔系数的温度行为，得到与实验相符的结果。指出赝隙随温度降低的不断加深导致了霍尔系数在比 |
| 9. | Semiconductor materials was laid on the base , and the corresponding electrode was lead to . the semiconductor material has selective adsorption to the gas that changes the electronic concentration which also raises hall coefficient , corresponding changes the export of hall electromotive force , so the gas sensors which is based on hall effect was made
当我们把半导体材料涂敷到基片上,并引出相应的电极,由于气敏材料对个别气体有选择的吸附特性从而改变了材料中的电子浓度,也就引起了霍耳系数的相应变化,输出的霍耳电动势也跟着变化,就制成了基于霍耳效应的气敏传感器。 |
| 10. | We measured the samples " electrical properties ( square resistance , square carrier concentration , carrier mobility and hall coefficient ) at room temperature by hall measurement . the experimental results revealed that all the samples are p - type , with increasing the annealing temperature , the carrier mobility increased and the square carrier concentration decreased . these changes in electrical properties are explained by a decrease in the number of mn acceptors because of the forming of mnas phase and the resuming of lattice defects during annealing
所有样品均为p型导电类型；发现在650到850温度范围内，随着退火温度的升高，样品的方块载流子浓度呈下降趋势，而载流子迁移率呈上升趋势；这是由于在退火过程中，随着退火温度的升高，有更多的mn参与mnas相的形成，使得以替位受主形式存在的mn减少，并且晶格缺陷得到恢复所致。 |
